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SRAM
Austin Semiconductor, Inc. 64K x 4 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY SPECIFICATIONS
* SMD 5962-88681 * MIL-STD-883
MT5C2564
PIN ASSIGNMENT (Top View)
FEATURES
* * * * High Speed: 15, 20, 25, 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process * Single +5V (+10%) Power Supply * Easy memory expansion with CE\ * All inputs and outputs are TTL compatible
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 CE\ Vss
1 2 3 4 5 6 7 8 9 10 11 12
24 23 22 21 20 19 18 17 16 15 14 13
Vcc A15 A14 A13 A12 A11 A10 DQ4 DQ3 DQ2 DQ1 WE\
A1 A0 NC Vcc NC 3 2 1 28 27
A2 A3 A4 A5 A6 A7 A8 A9 CE\ 4 5 6 7 8 9 10 11 12 26 25 24 23 22 21 20 19 18 A15 A14 A13 A12 A11 A10 DQ4 DQ3 DQ2
24-Pin DIP (C) (300 MIL)
28-Pin LCC (EC)
13 14 15 16 17 DQ1 WE\ NC Vss NC
OPTIONS
* Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access * Package(s) Ceramic DIP (300 mil) Ceramic LCC
MARKING
-15 -20 -25 -35 -45 -55* -70*
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system design. The x4 configuration features common data input and output. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ goes LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. These devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.
C EC
No. 106 No. 204
* Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT * 2V data retention/low power L
*Electrical characteristics identical to those provided for the 45ns access devices.
For more products and information please visit our web site at www.austinsemiconductor.com
MT5C2564 Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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SRAM
Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM
VCC
A0 A1
MT5C2564
GND
ROW DECODER
A3 A4 A5 A13 A14 A15
262,144-BIT MEMORY ARRAY
I/O CONTROL
A2
DQ4
DQ1
CE\ COLUMN DECODER WE\ A6 A7 A8 A9 A10 A11 A12 POWER DOWN
TRUTH TABLE
MODE STANDBY READ WRITE CE\ H L L WE\ X H L DQ HIGH-Z Q D POWER STANDBY ACTIVE ACTIVE
MT5C2564 Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Vss..................................-0.5V to +7V Voltage on Vcc Supply Relative to Vss.............................-0.5V to +7V Storage Temperature......................................................-65oC to +150oC Power Dissipation..............................................................................1W Short Circuit Output Current.........................................................50mA Lead Temperature (soldering 10 seconds)....................................+260oC Junction Temperature..................................................................+175oC
MT5C2564
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage
CONDITIONS
SYM VIH VIL
MIN 2.2 -0.5 -10 -10 2.4
MAX VCC+0.5 0.8 10 10
UNITS V V A A V
NOTES 1 1, 2
0VILI ILO VOH VOL
1 1
0.4
MAX -25 140
V
PARAMETER Power Supply Current: Operating Power Supply Current: Standby
CONDITIONS CE\ < VIL; VCC = MAX f = MAX = 1/tRC (MIN) Output Open CE\ > VIH; All Other Inputs < VIL or > VIH, VCC = MAX f = 0 Hz CE\ > VCC -0.2V; VCC = MAX VIL < VSS +0.2V VIH > VCC -0.2V; f = 0 Hz "L" Version Only
SYM Icc
-15 165
-20 150
-35 120
-45 120
UNITS NOTES mA 3
ISBT2
45
45
40
25
25
mA
ISBC2 ISBC2
20 4
20 4
20 4
20 4
20 4
mA mA
CAPACITANCE
DESCRIPTION Input Capacitance Output Capacitance CONDITIONS TA = 25 C, f = 1MHz VCC = 5V
o
SYM CI CO
MAX 10 12
UNITS pF pF
NOTES 4 4
MT5C2564 Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
Austin Semiconductor, Inc.
MT5C2564
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Chip Enable to power-up time Chip disable to power-down time WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z -15 -20 -25 -35 -45 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tPU tPD tWC tCW tAW tAS tAH tWP tDS tDH tLZWE tHZWE 15 15 15 3 3 8 0 15 15 12 12 0 2 12 7 0 0 0 20 15 15 0 2 15 10 0 0 0 0 20 25 18 18 0 2 17 12 0 0 0 3 3 10 0 25 35 30 30 0 5 30 20 0 0 0 20 20 20 3 3 10 0 35 45 40 40 0 5 40 20 0 0 0 25 25 25 3 3 20 0 45 35 35 35 3 3 20 45 45 45 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
7 6, 7 4 4
7
10
11
20
20
7 6, 7
MT5C2564 Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
Austin Semiconductor, Inc.
AC TEST CONDITIONS
Input pulse levels ...................................... Vss to 3.0V Input rise and fall times ......................................... 5ns Input timing reference levels ................................ 1.5V Output reference levels ....................................... 1.5V Output load ................................. See Figures 1 and 2
MT5C2564
167 Q 30pF VTH = 1.73V Q
167 5pF VTH = 1.73V
Fig. 1 Output Load Equivalent
Fig. 2 Output Load Equivalent
NOTES
1. 2. 3. All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) This parameter is guaranteed but not tested. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured 200mV typical from steady state voltage,
4. 5. 6.
allowing for actual tester RC time constant. At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE and tHZOE is less than tLZOE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enable is held in its active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. 12. Chip enable (CE\) and write enable (WE\) can initiate and terminate a WRITE cycle. 7.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION VCC for Retention Data Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time CONDITIONS SYM VDR CE\ > (VCC - 0.2V) VIN > (VCC - 0.2V) or < 0.2V VCC = 2V VCC = 3V tCDR tR 0 tRC ICCDR MIN 2 MAX --1 2 --UNITS V mA mA ns ns 4 4, 11 NOTES
LOW Vcc DATA RETENTION WAVEFORM
VCC
t CDR DATA RETENTION MODE 4.5V VDR > 2V 4.5V tR V DR
MT5C2564 Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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4321 4321 4321 4321
321 321 321 321
CE\
VIH VIL
2365 4365 87 4365 21214321 87 41214321 21214321 87 21214321 4365 87
87654321 4321 321 87654321 4321 87654321 87654321 321
DON'T CARE UNDEFINED
SRAM
Austin Semiconductor, Inc.
MT5C2564
READ CYCLE NO. 1
ttRC RC
ADDRESS
VALID
8, 9
ttAA AA t OH tOH
DQ
PREVIOUS DATA VALID DATA VALID
READ CYCLE NO. 2
ttRC RC
CE\
7, 8, 10
ttLZCE LZCE tACE tACE
DQ
DATA VALID
HZCE tHZCE
t
ttPU PU
Icc
ttPD PD
MT5C2564 Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
SRAM
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12 (Chip Enabled Controlled)
WC tWC
MT5C2564
t
ADDRESS
tAW tAW tAS tAS
CE\ WE\
tCW tCW t WP tWP1 tDS tDS
AH tAH
t
D Q
DATA VAILD
HIGH Z
WRITE CYCLE NO. 2 7, 12 (Write Enabled Controlled)
tWC tWC
ADDRESS
tAW tAW tCW tCW t AH tAH
CE\
tAS tAS
t WP tWP1 tDS t DH tDH
WE\
Q
HIGH-Z
DON'T CARE UNDEFINED
NOTE: Output enable (OE\) is inactive (HIGH).
MT5C2564 Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
6 231 1 1543422 2 1 65432321 4111 1 65434111 431 2 1 15432321 6 222
432 4321 4321 1 4321
321 321 321
436543210987654321 1 2 432543210987654321 111 611 432543210987654321 1 6 211 436543210987654321 111
D
tHZWE
DATA VALID
321098765432109876543211 1 2 32109876543210987654321 1 32109876543210987654321
098765432121098765432109876543210987654321 098765432121098765432109876543210987654321
t DH tDH tLZWE
109876543210987654321 109876543210987654321 987654321 987654321 987654321 116543210987654321 27 1 2765432109876543 1 21 1 276543210987654321 2
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #106 (Package Designator C) SMD #5962-88681, Case Outline L
MT5C2564
D A Q L Pin 1 S1 E e b b2
NOTE
0o to 15o
c eA
SMD SPECIFICATIONS MIN MAX SYMBOL A --0.200 b 0.014 0.026 b2 0.045 0.065 c 0.008 0.018 D --1.280 E 0.220 0.310 eA 0.300 BSC e 0.100 BSC L 0.125 0.200 Q 0.015 0.060 S1 0.005 --NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
*All measurements are in inches.
MT5C2564 Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #204 (Package Designator EC) SMD# 5962-88681, Case Outline X
D1 B2 D2 L2
MT5C2564
E3
E
e E1 E2
h x 45o D hx45 o L B1 D3 A1 A
SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L2
SMD SPECIFICATIONS MIN MAX 0.060 0.120 0.050 0.088 0.022 0.028 0.072 REF 0.342 0.358 0.200 BSC 0.100 BSC --0.358 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
*All measurements are in inches.
MT5C2564 Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
Austin Semiconductor, Inc.
MT5C2564
ORDERING INFORMATION
EXAMPLE: MT5C2564C-20L/IT
Device Number MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 Package Speed Options** Process Type ns C C C C C C C -15 -20 -25 -35 -40 -55 -70 L L L L L L L /* /* /* /* /* /* /*
EXAMPLE: MT5C2564EC-45/XT
Device Number MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 Package Speed Options** Process Type ns EC EC EC EC EC EC EC -15 -20 -25 -35 -40 -55 -70 L L L L L L L /* /* /* /* /* /* /*
*AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing ** OPTIONS L = 2V Data Retention/Low Power
-40oC to +85oC -55oC to +125oC -55oC to +125oC
MT5C2564 Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
Austin Semiconductor, Inc.
MT5C2564
ASI TO DSCC PART NUMBER CROSS REFERENCE*
ASI Package Designator C
ASI Part # MT5C2564C-20/883C MT5C2564C-25/883C MT5C2564C-35/883C MT5C2564C-45/883C MT5C2564C-55/883C MT5C2564C-70/883C SMD Part # 5962-8868106LA 5962-8868105LA 5962-8868101LA 5962-8868102LA 5962-8868103LA 5962-8868104LA
ASI Package Designator EC
ASI Part # MT5C2564EC-20/883C MT5C2564EC-25/883C MT5C2564EC-35/883C MT5C2564EC-45/883C MT5C2564EC-55/883C MT5C2564EC-70/883C SMD Part # 5962-8868106XA 5962-8868105XA 5962-8868101XA 5962-8868102XA 5962-8868103XA 5962-8868104XA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C2564 Rev. 2.0 11/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11

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